18N25

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-786.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

250

V

Gate to Source Voltage

±20

V

Drain Current

Continuous

18

A

Pulsed (Note 2)

72

A

Avalanche Energy

Single Pulsed (Note 3)

945

mJ

Avalanche Current (Note 2)

18

A

Power Dissipation

TO-220F

40

W

TO-263

138

°C

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

=25Ω.

4. Drain current limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220F

3.1

°C/W

TO-263

0.9

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

250

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

100

nA

Reverse

-100

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Drain-Source On-State Resistance

0.16

0.24

Ω

DYNAMIC PARAMETERS

Input Capacitance

2200 2860

pF

Output Capacitance

330

430

pF

Reverse Transfer Capacitance

25

40

pF

SWITCHING PARAMETERS

Total Gate Charge

30

45

nC

Gate-Source Charge

10

nC

Gate-Drain Charge

10

nC

Turn-ON Delay Time

Ω (Note 1,2)

15

25

ns

Turn-ON Rise Time

130

195

ns

Turn-OFF Delay Time

30

45

ns

Turn-OFF Fall Time

100

150

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

18

A

Maximum Body-Diode Pulsed Current

72

A

Drain-Source Diode Forward Voltage

1.4

V

Note: 1.

Pulse Test : Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature