ACS108 datasheet(5/13 Pages) STMICROELECTRONICS

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DocID6518 Rev 5

5/13

ACS108

Characteristics

Figure 10. On-state characteristics (maximum

values)

Figure 11. Relative variation of critical rate of

decrease of main current versus junction

temperature

ITM(A)

0.10

1.00

10.00

100.00

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Tj max.:

Vto= 0.85 V

Rd= 300 m

Tj=25 °C

Tj=125 °C

VTM(V)

(dI/dt) [T ] / (dI/dt) [T =125 °C]

0.0

0.5

1.0

1.5

2.0

2.5

105

115

125

T (°C)

Figure 12. Relative variation of static dV/dt

immunity versus junction temperature(1)

Figure 13. Relative variation of leakage current

versus junction temperature

VD = VR = 402 V: Typical values above 5 kV/µs. Beyond equipment capability

dV/dt [Tj]/ dV/dt[T j=125°C]

100

125

VD=VR=536V

Tj(°C)

1.0E-03

1.0E-02

1.0E-01

1.0E+00

100

125

IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=125°C;800 V]

VDRM=VRRM=600 V

VDRM=VRRM=800 V

Tj(°C)

Figure 14. Relative variation of critical rate of

decrease of main current (di/dt)c versus

(dV/dt)c

Figure 15. Thermal resistance junction to

ambient versus copper surface under tab

(SOT-223)

(dI/dt)

c [(dV/dt) c ] / Specified (dI/dt)c

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.1

1.0

10.0

100.0

Tj =125 °C

(dV/dt)c (V/µs)

Rth(j-a)(°C/W)

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

SOT-223

SCU(cm²)

Printed circuit board FR4

copper thickness = 35 µm

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