2SC3663 datasheet(1/8 Pages) NEC

部品番号	2SC3663

部品情報	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

PDF	8 Pages

Scroll/Zoom	100%

メーカー	NEC [NEC]

ホームページ	http://www.nec.com/

Logo

1 / 8 page

DATA SHEET

SILICON TRANSISTOR

2SC3663

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

1997

©

Document No. P10406EJ1V0DS00 (1st edition)

Date Published August 1997 N

Printed in Japan

DATA SHEET

FEATURES

•

Low-voltage, low-current, low-noise and high-gain

NF = 3.0 dB TYP.

@VCE = 1 V, IC = 250

PA, f = 1.0 GHz

GA = 3.5 dB TYP.

@VCE = 1 V, IC = 250

PA, f = 1.0 GHz

•

Ideal for battery drive of pagers, compact radio equipment,

cordless phones, etc.

•

Gold electrode gives high reliability.

•

Mini mold package, ideal for hybrid ICs.

ABSOLUTE MAXIMUM RATINGS (TA = 25

qqqqC)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

8V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

5mA

Total Power Dissipation

PT

50

mW

Junction Temperature

Tj

150

qC

Storage Temperature

Tstg

ð65 to +150

qC

ELECTRICAL CHARACTERISTICS (TA = 25

qqqqC)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

0.1

PA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

0.1

PA

DC Current Gain

hFE

VCE = 1 V, IC = 250

PA, pulse

50

100

250

Gain Bandwidth Product

fT

VCE = 1 V, IC = 1 mA

4

GHz

Insertion Power Gain

°S21e°2

VCE = 1 V, IC = 1 mA, f = 1 GHz

4.0

6.5

dB

Maximum Available Gain

MAG

VCE = 1 V, IC = 1 mA, f = 1 GHz

12.5

dB

Noise Figure

NF

VCE = 1 V, IC = 250

PA, f = 1.0 GHz

3.0

4.5

dB

Associated Power Gain

GA

VCE = 1 V, IC = 250

PA, f = 1.0 GHz

3.5

dB

Collector Capacitance

Cob

Note

VCB = 1 V, IE = 0, f = 1.0 MHz

0.4

0.6

pF

Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.

PACKAGE DIMENSIONS (in mm)

2.8 ± 0.2

1.5

C

Marking

E

B

0.65

+0.1

–0.15

PIN CONNECTIONS

E: Emitter

B: Base

C: Collector

Marking: R62

同様の部品番号 - 2SC3663

メーカー	部品番号	データシート	部品情報
Guangdong Kexin Industr...	2SC3663	37Kb / 1P	NPN Epitaxial Silicon Transistor

More results

同様の説明 - 2SC3663

メーカー	部品番号	データシート	部品情報
NEC	2SC5432	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5433	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5434	61Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5435	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5437	63Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
California Eastern Labs	NE85634	216Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5013	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5432	314Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION February 2002