IXYS reserves the right to change limits, test conditions, and dimensions.

IXFP 5N50PM

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

3.0

4.7

S

C

iss

620

pF

C

oss

V

72

pF

C

rss

6.3

pF

t

d(on)

28

ns

t

r

V

28

ns

t

d(off)

R

65

ns

t

f

26

ns

Q

g(on)

12.6

nC

Q

gs

V

4.3

nC

Q

gd

5.0

nC

R

thJC

3.3

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

5

A

I

SM

Repetitive

15

A

V

SD

I

1.5

V

t

rr

I

200 ns

Q

RM

V

0.15

µC

I

RM

1A

Notes:

1) Pulse test, t

≤300 µs, duty cycle d≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

12 3

ISOLATED TO-220 (IXTP...M)

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered

are derived from data gathered during objective characterizations of preliminary engineer-

ing lots; but also may yet contain some information supplied during a pre-production

design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-

sions without notice.