USBLC6-4SC6Y datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

USBLC6-4SC6Y

Characteristics

Doc ID 023199 Rev 2

3/10

Table 2.

Electrical characteristics (Tamb = 25 °C)

Symbol

Parameter

Test Conditions

Value

Unit

Min.

Typ.

Max.

IRM

Leakage current

VRM = 5.25 V

150

VBR

Breakdown voltage between VBUS and

GND

IR = 1 mA

Forward voltage

IF = 10 mA

0.86

VCL

Clamping voltage

IPP = 1 A, 8/20 µs

Any I/O pin to GND

IPP = 5 A, 8/20 µs

Any I/O pin to GND

Ci/o-GND Capacitance between I/O and GND

VR = 1.65 V

C

i/o-GND

0.015

Ci/o-i/o

Capacitance between I/O

VR = 1.65 V

1.85

2.7

C

i/o-i/o

0.04

Figure 3.

Capacitance versus voltage

(typical values)

Figure 4.

Line capacitance versus frequency

(typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

C(pF)

F=1MHz

=30mV

T =25°C

OSC

RMS

C =I/O-I/O

C =I/O-GND

Data line voltage (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

1000

C(pF)

=30mV

T =25°C

OSC

RMS

=1.65V

F(MHz)

=0V

Figure 5.

Relative variation of leakage

current versus junction

temperature (typical values)

Figure 6.

Frequency response

100

125

T (°C)

=5V

BUS

I[T

j] / I

j=25°C]

100.0k

1.0M

10.0M

100.0M

1.0G

-20.00

-15.00

-10.00

-5.00

0.00

S21(dB)

F(Hz)

USBLC6-4SC6Y データシート(PDF) 3 Page - STMicroelectronics

USBLC6-4SC6Y データシート(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

データシートダウンロード