Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGA6589Z

DC to 3500MHz, CASCADABLE LOW NOISE,

HIGH GAIN SiGe HBT

The SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

0

8

16

24

32

01

23

45

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

V



High Gain: 20dB at 1950MHz



Cascadable 50





Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS111014



Package: SOT-89

SGA6589ZDC

to 3500MHz,

Cascadable

Low Noise,

High Gain SiGe

HBT

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

23.0

25.5

28.1

dB

850MHz

20.0

dB

1950MHz

18.2

dB

2400MHz

Output Power at 1dB Compression

21.5

dBm

850MHz

19.0

dBm

1950MHz

Output Third Intercept Point

32.5

dBm

850MHz

32.0

dBm

1950MHz

Bandwidth Determined by Return

Loss

4000

MHz

>9dB

Input Return Loss

13.1

dB

1950MHz

Output Return Loss

9.2

dB

1950MHz

Noise Figure

3.0

dB

1950MHz

Device Operating Voltage

4.5

4.9

5.3

V

Device Operating Current

72

80

88

mA

Thermal Resistance

(Junction - Lead)

97

°C/W