2SC5180 datasheet(1/8 Pages) NEC

部品番号	2SC5180

部品情報	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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メーカー	NEC [NEC]

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©

1994

DATA SHEET

SILICON TRANSISTOR

2SC5180

FEATURES

• Low current consumption and high gain

S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

S21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

• Supper Mini-Mold package

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

Embossed tape, 8 mm wide, pins No. 3

2SC5180–T1

(base) and No. 4 (emitter) facing the

3 000 units/reel

perforations

Embossed tape, 8 mm wide, pins No. 1

2SC5180–T2

(collector) and No. 2 (emitter) facing the

perforations

* Contact your NEC sales representatives to order samples for evaluation (available

in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

10

mA

Total Power Dissipation

PT

30

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

1.25 ± 0.1

2.1 ± 0.2

PACKAGE DIMENSIONS

(Units : mm)

1. Collector

2. Emitter

3. Base

4. Emitter

PIN CONNECTIONS

NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

Caution;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12104EJ2V0DS00 (2nd edition)

(Previous No. TC-2477)

Date Published December 1996 N

Printed in Japan

同様の部品番号 - 2SC5180

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SC5180	278Kb / 9P	NPN SILICON RF TRANSISTOR 2004
Renesas Technology Corp	2SC5180-T1	278Kb / 9P	NPN SILICON RF TRANSISTOR 2004

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同様の説明 - 2SC5180

メーカー	部品番号	データシート	部品情報
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	2SC5181	50Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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