2SC5181 datasheet(1/8 Pages) NEC

部品番号	2SC5181

部品情報	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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メーカー	NEC [NEC]

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SILICON TRANSISTOR

FEATURES

•

Low current consumption and high gain

|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz

•

Ultra Super Mini-Mold package

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5181

50 units/box

2SC5181-T1

3 000 units/reel

*

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

10

mA

Total Power Dissipation

PT

30

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

2SC5181

Document No. P12105EJ2V0DS00 (2nd edition)

(Previous No. TC-2478)

Date Published

November 1996 N

Printed in Japan

©

1994

DATA SHEET

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

1.6 ± 0.1

0.8 ± 0.1

3

2

1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

PACKAGE DIMENSIONS

(Units: mm)

Embossed tape, 8 mm wide, pin No. 3

(collector) facing the perforation

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

同様の部品番号 - 2SC5181

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SC5181	1Mb / 10P	SILICON TRANSISTOR 1994
Renesas Technology Corp	2SC5181-T1	1Mb / 10P	SILICON TRANSISTOR 1994

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同様の説明 - 2SC5181

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