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DS2012SF59 データシート(PDF) 3 Page - Dynex Semiconductor |
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DS2012SF59 データシート(HTML) 3 Page - Dynex Semiconductor |
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3 / 7 page  3/7 www.dynexsemi.com DS2012SF SURGE RATINGS Conditions 10ms half sine; T case = 150 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 150 oC V R = 0 Max. Units Symbol Parameter I FSM Surge (non-repetitive) forward current I 2tI2t for fusing I FSM Surge (non-repetitive) forward current I 2t I 2t for fusing A 2s 16.5 kA 0.92 x 106 A2s 13.5 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.038 Anode dc Clamping force 19.5kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.004 Double side - T vj Virtual junction temperature T stg Storage temperature range Single side Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter –55 175 oC Forward (conducting) - 160 oC - 0.008 oC/W oC/W Cathode dc - 0.052 oC/W Double side cooled - 0.022 oC/W 1.425 x 10 6 Clamping force - kN 22.0 18.0 150 - oC Reverse (blocking) |
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