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MP02/260-14 データシート(PDF) 2 Page - Dynex Semiconductor |
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MP02/260-14 データシート(HTML) 2 Page - Dynex Semiconductor |
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2 / 9 page ![]() MP02 XX 260 Series 2/9 Symbol Parameter Conditions Max. Units A Symbol Parameter Conditions V Units Max. mA Forward voltage 30 V FM I RM Peak reverse current At V RRM, Tj = 150 oC At 600A, T case = 25 oC V R = 0 V R = 50% VRRM V R = 0 V R = 50% VRRM A 2s A 2s A I 2t for fusing Surge (non-repetitive) forward current I FSM Symbol Parameter Conditions oC/W Units oC/W oC/W Thermal resistance - case to heatsink per Diode R th(c-hs) R th(j-c) Virtual junction temperature T vj oC oC T sto Storage temperature range Mounting torque = 6Nm with mounting compound 3 phase halfwave dc Commoned terminals to base plate AC RMS, 1min, 50Hz Max. 0.22 0.23 150 m Ω 0.667 At T vj = 150 oC r T On-state slope resistance V TO Threshold voltage V 0.84 At T vj = 150 oC Thermal resistance - junction to case per Diode Isolation voltage V isol 2.5 kV 0.07 10ms half sine; T j = 150˚C 10ms half sine; T j = 150˚C I 2t -40 to 150 8100 6500 211000 328000 0.21 oC/W 1.3 SURGE RATINGS - PER ARM THERMAL & MECHANICAL RATINGS CHARACTERISTICS |
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