2SC5436 datasheet(1/12 Pages) NEC

部品番号	2SC5436

部品情報	NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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メーカー	NEC [NEC]

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©

1998

PRELIMINARY DATA SHEET

FEATURE

•

Ultra super mini-mold thin flat package

(1.4 mm

× 0.8 mm × 0.59 mm: TYP.)

•

Contains same chip as 2SC5186

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

90

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

SILICON TRANSISTOR

2SC5436

NPN EPITAXIAL SILICON TRANSISTOR

ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY

LOW-NOISE AMPLIFICATION

Document No. P13079EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

PACKAGE DIMENSIONS (in mm)

1.4 ± 0.05

0.8 ± 0.1

1

3

2

PIN CONNECTIONS

1: Emitter

2: Base

3: Collector

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

100

nA

DC Current Gain

hFE

VCE = 2 V, IC = 20 mANote 1

70

130

Reverse Transfer Capacitance

Cre

VCB = 2 V, IE = 0, f = 1 MHzNote 2

0.4

0.8

pF

Gain Bandwidth Product (1)

fT (1)

VCE = 2 V, IC = 20 mA, f = 2 GHz

9.0

14.0

GHz

Gain Bandwidth Product (2)

fT (2)

VCE = 1 V, IC = 10 mA, f = 2 GHz

7.0

12.0

GHz

Insertion Power Gain (1)

|S21e|2 (1)

VCE = 2 V, IC = 20 mA, f = 2 GHz

8.5

10.0

dB

Insertion Power Gain (2)

|S21e|2 (2)

VCE = 1 V, IC = 10 mA, f = 2 GHz

6.0

9.0

dB

Noise Figure (1)

NF (1)

VCE = 2 V, IC = 3 mA, f = 2 GHz

1.4

2.0

dB

Noise Figure (2)

NF (2)

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.4

2.0

dB

Notes 1. Pulse measurement PW

≤ 350

µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

同様の部品番号 - 2SC5436

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SC5436	232Kb / 14P	NPN SILICON RF TRANSISTOR 2002
	2SC5436	213Kb / 8P	NPN SILICON SiGe RF TWIN TRANSISTOR 2005
	2SC5436	388Kb / 30P	NPN SILICON RF TWIN TRANSISTOR 2002
	2SC5436	387Kb / 30P	NPN SILICON RF TWIN TRANSISTOR 2001
	2SC5436-T1	232Kb / 14P	NPN SILICON RF TRANSISTOR 2002

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同様の説明 - 2SC5436

メーカー	部品番号	データシート	部品情報
NEC	2SC4226	56Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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	2SC4959	47Kb / 6P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5181	50Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5184	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5186	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION