2SC5507 datasheet(3/12 Pages) NEC

部品番号	2SC5507

部品情報	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

PDF	12 Pages

Scroll/Zoom	100%

メーカー	NEC [NEC]

ホームページ	http://www.nec.com/

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Preliminary Data Sheet P13864EJ1V0DS00

2SC5507

TYPICAL CHARACTERISTICS (TA = +25 °C)

Thermal/DC Characteristics

Collector Current vs. Collector to Emitter Voltage

DC Current Gain vs. Collector Current

0.001

200

100

0.01

0.1

100

Collector to Emitter Voltage VCE (V)

Collector Current IC (mA)

Total Power Dissipation vs.

Ambient Temperature, Case Temperature

Collector Current vs. DC Base Voltage

250

200

150

100

Ambient Temperature TA (

°C), Case Temperature TC (°C)

DC Base Voltage VBE (V)

PT-TA: Free air

PT-TA: Mounted on ceramic board

(15 mm

× 15 mm, t = 0.6 mm)

PT-TC: When case temperature

is specified

100

125

150

0.2

0.4

0.6

0.8

1.0

1.2

300 A

280 A

260 A

240 A

220 A

200 A

180 A

160 A

140 A

120 A

100 A

80 A

60 A

40 A

IB = 20 A

VCE = 2 V

Capacitance/fT Characteristics

0.30

0.25

0.20

0.15

0.10

0.05

1.0

2.0

3.0

4.0

5.0

100

Gain Bandwidth Product vs. Collector Current

Reverse Transfer Capacitance vs. Collector to Base Voltage

Collector to Base Voltage VCB (V)

Collector Current IC (mA)

f = 1 MHz

VCE = 3 V

f = 2 GHz

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