2SC5508 datasheet(1/16 Pages) NEC

部品番号	2SC5508

部品情報	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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メーカー	NEC [NEC]

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NPN SILICON RF TRANSISTOR

2SC5508

NPN SILICON RF TRANSISTOR

FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

Document No. P13865EJ1V0DS00 (1st edition)

Date Published March 1999 N CP(K)

Printed in Japan

PRELIMINARY DATA SHEET

1999

©

FEATURES

•

Ideal for low-noise, high-gain amplification applications

•

NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

•

Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA

•fT = 25 GHz technology

•

Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number

Quantity

Packaging Style

2SC5508

Loose product (50 pcs)

2SC5508-T2

Taping product (3 kpcs/reel)

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

3.3

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

35

mA

Total Power Dissipation

Ptot

Note

115

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

Note TA = +25 °C (free air)

THERMAL RESISTANCE

Item

Symbol

Value

Unit

Junction to Case Resistance

Rth j-c

150

°C/W

Junction to Ambient Resistance

Rth j-a

650

°C/W

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

同様の部品番号 - 2SC5508

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SC5508	229Kb / 10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508-A	229Kb / 10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508-T2	229Kb / 10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508-T2-A	229Kb / 10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508-T2B	229Kb / 10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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同様の説明 - 2SC5508

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California Eastern Labs	NESG3031M05-T1-A	673Kb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
Renesas Technology Corp	2SC5508	229Kb / 10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
Renesas Technology Corp	2SC5606	201Kb / 9P	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION