BGA3012

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 3 — 26 September 2013

3 of 15

NXP Semiconductors

BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

6.

Thermal characteristics

7.

Characteristics

7.1 Forward application

[1]

(IM3) is 2

 f

[2]

(IM2) is

f

[3]

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to solder point

40

K/W

Table 7.

R1 = 100

Symbol

Parameter

Conditions

Min

Typ Max Unit

supply voltage

RF input AC coupled

7.6

8

8.4

V

total supply current

-

110 125

mA

s

2

insertion power gain

11

12

13

dB

slope straight line

-

0.5

-

dB

FL

flatness of frequency response

-

0.5

-

dB

NF

noise figure

f = 50 MHz

-

3.0

3.5

dB

f = 500 MHz

-

3.1

3.6

dB

f = 1000 MHz

-

3.4

3.9

dB

input return loss

f = 50 MHz

-

22

-

dB

f = 500 MHz

-

27

-

dB

f = 1000 MHz

-

29

-

dB

output return loss

f = 50 MHz

-

21

-

dB

f = 500 MHz

-

22

-

dB

f = 1000 MHz

-

15

-

dB

output power at 1 dB

gain compression

21.5 23

-

dBm

output third-order intercept point

40

-

dBm

output second-order intercept point

[2] -60

-dBm

CTB

composite triple beat

[3] -

75 -

dBc

CSO

composite second-order distortion

[3] -

60 -

dBc