• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

3

GaAs DPDT Switch

DC - 6.0 GHz

Rev. V3

MASW6030G

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

20

30

40

50

60

70

80

01

23

45

67

Frequency (GHz)

Isolation @ 25°C

1.0

1.2

1.4

1.6

1.8

2.0

01

23

45

67

Frequency (GHz)

VSWR @ 25°C

Handling Precautions

Permanent damage to the MASW6030G may

occur if the following precautions are not adhered

to:

A. Cleaniness - MASW6030G should be handled

in a clean environment.

DO NOT attempt to

clean unit after the MASW6030G is installed.

B. Static Sensitivity—All chip handling equipment

and personnel should be DC grounded.

C. Transient - Avoid instrument and power supply

transients

while

bias

is

applied

to

the

MASW6030G.

Use shielded signal and bias

cables to minimize inductive pick-up.

D. Bias

-

Apply

voltage

to

either

of

the

complementary control ports only when the

other is grounded. No port should be allowed to

“float”.

E.

General Handling - It is recommended that the

MASW6030G chip be handled along the long

side of the die with a sharp pair of bent

tweezers.

DO NOT touch the surface of the

chip with fingers or tweezers.

Typical Performance

0.0

0.5

1.0

1.5

2.0

01

23

45

67

Insertion Loss +30°C

Insertion Loss -55°C

Insertion Loss +85°C

Frequency (GHz)

Insertion Loss

Wire Bonding

A. Ball or wedge with 1.0 mil diameter pure gold

wire. Thermosonic wirebonding with a nominal

stage temperature of 150°C and a ball bonding

force of 40 to 50 grams or wedge bonding force

o1 18 to 22 grams is recommended. Ultrasonic

energy and time should be adjusted to the

minimum levels achieve reliable wirebonds.

B. Wirebonds should be started on the chip and

terminated on the package.