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PTB20176 データシート(PDF) 1 Page - Ericsson

部品番号 PTB20176
部品情報  5 Watts, 1.78-1.92 GHz RF Power Transistor
PDF  3 Pages
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メーカー  ERICSSON [Ericsson]
ホームページ  http://www.ericsson.com
Logo ERICSSON - Ericsson

PTB20176 データシート(HTML) 1 Page - Ericsson

  PTB20176 Datasheet HTML 1Page - Ericsson PTB20176 Datasheet HTML 2Page - Ericsson PTB20176 Datasheet HTML 3Page - Ericsson  
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1
Typical Output Power vs. Input Power
0
2
4
6
8
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Input Power (Watts)
VCC = 26 V
ICQ = 30 mA
f = 1850 MHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Emitter Voltage
VCES
45
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
1
Adc
Total Device Dissipation at Tflange = 25°C
PD
21
Watts
Above 25°C derate by
0.12
W/°C
Storage Temperature
Tstg
150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
8.5
°C/W
PTB 20176
5 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20176 is a common emitter RF power transistor intended for 26
Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum
output power, it is specifically designed for class A or AB linear power
amplifier applications. Ion implantation, nitride surface passivation
and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
Package 20201
20176
LOT
CODE
• 26 Volt, 1.85 GHz Characteristics
• Class A/AB
• Internally Matched
• Gold Metallization
• Silicon Nitride Passivated
9/28/98


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