| データシートサーチシステム |
|
PTB20176 データシート(PDF) 1 Page - Ericsson |
|
|
|||||||||||||||||||||||||||||
PTB20176 データシート(HTML) 1 Page - Ericsson |
|
1 / 3 page ![]() e 1 Typical Output Power vs. Input Power 0 2 4 6 8 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Input Power (Watts) VCC = 26 V ICQ = 30 mA f = 1850 MHz Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Emitter Voltage VCES 45 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1 Adc Total Device Dissipation at Tflange = 25°C PD 21 Watts Above 25°C derate by 0.12 W/°C Storage Temperature Tstg 150 °C Thermal Resistance (Tflange = 70°C) RθJC 8.5 °C/W PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Package 20201 20176 LOT CODE 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride Passivated 9/28/98 |
同様の部品番号 - PTB20176 |
|
同様の説明 - PTB20176 |
|
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |