NPN SILICON PLANAR TRANSISTOR

2N657

TO-39

Metal Can Package

General Purpose Transistor.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector Emitter Voltage

100

V

Collector Base Voltage

100

V

Emitter Base Voltage

8.0

V

Collector Current

0.5

A

Power Dissipation @ Ta=25ºC

1.0

W

Derate Above 25ºC

5.7

mW/ºC

Power Dissipation@ Tc=25ºC

4.0

W

Derate Above 25ºC

22.8

mW/ºC

Operating And Storage Junction

-65 to +200

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNITS

Collector Emitter Voltage

100

V

Collector Base Voltage

100

V

Emitter Base Voltage

8.0

V

Collector Cut off Current

10

µA

DC Current Gain

30

90

Collector Emitter Saturation Voltage

4.0

V

SMALL SIGNAL CHARACTERISTICS

Input Impedance *

0.5

K

Ω

*Pulse Test: Pulse Length= 300

µs, Duty Cycle <2%

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

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