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データシートサーチシステム |
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データシートサーチシステム |
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IO13PDB0V0 データシート(PDF) 25 Page - Microsemi Corporation |
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IO13PDB0V0 データシート(HTML) 25 Page - Microsemi Corporation |
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25 / 197 page  SmartFusion Customizable System-on-Chip (cSoC) Re vi s i on 12 2 - 13 PAC24 Current Monitor Power Contribution See Table 2-93 on page 2-77 –1.03 mW PAC25 ABPS Power Contribution See Table 2-96 on page 2-81 –0.70 mW PAC26 Sigma-Delta DAC Power Contribution2 See Table 2-98 on page 2-84 –0.58 mW PAC27 Comparator Power Contribution See Table 2-97 on page 2-83 –1.02 mW PAC28 Voltage Regulator Power Contribution3 See Table 2-99 on page 2-86 –36.30 mW Notes: 1. For a different use of MSS peripherals and resources, refer to SmartPower. 2. Assumes Input = Half Scale Operation mode. 3. Assumes 100 mA load on 1.5 V domain. Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs Parameter Definition Power Supply Device Units Name Domain A2F060 A2F200 A2F200 PDC1 Core static power contribution in SoC mode VCC 1.5 V 11.10 23.70 37.95 mW PDC2 Device static power contribution in Standby Mode See Table 2-8 on page 2-10 – 11.10 23.70 37.95 mW PDC3 Device static power contribution in Time Keeping mode See Table 2-8 on page 2-10 3.3 V 33.00 33.00 33.00 µW PDC7 Static contribution per input pin (standard dependent contribution) VCCxxxxIOBx/VCC See Table 2-10 and Table 2-11 on page 2-11. PDC8 Static contribution per output pin (standard dependent contribution) VCCxxxxIOBx/VCC See Table 2-12 and Table 2-13 on page 2-11. PDC9 Static contribution per PLL VCC 1.5 V 2.55 2.55 2.55 mW Table 2-16 • eNVM Dynamic Power Consumption Parameter Description Condition Min. Typ. Max. Units eNVM System eNVM array operating power Idle 795 µA Read operation See Table 2-14 on page 2-12. Erase 900 µA Write 900 µA PNVMCTRL eNVM controller operating power 20 µW/MHz Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs Parameter Definition Power Supply Device Units Name Domain A2F060 A2F200 A2F500 |
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