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IXGC16N60C2 データシート(PDF) 1 Page - IXYS Corporation |
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IXGC16N60C2 データシート(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2004 IXYS All rights reserved G = Gate C = Collector E = Emitter Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 600 V V CGR T J = 25 °C to 150°C; R GE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C20 A I C110 T C = 110°C8 A I D110 T C = 110°C (IXGC16N60C2D1 diode) 10 A I CM T C = 25°C, 1 ms 100 A SSOA V GE = 15 V, TJ = 125°C, RG = 22 Ω I CM = 32 A (RBSOA) Clamped inductive load @0.8 V CES P C T C = 25°C63 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C F C Mounting Force 11..65/2.5..15 N/lb. V ISOL Isolation Voltage; 50/60Hz; t = 1minute; RMS 2500 V Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Weight 2 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V GE(th) I C = 250 µA, VCE = VGE 2.5 5.0 V I CES V CE = VCES 16N60C2 25 µA V GE = 0 V 16N60C2D1 50 µA I GES V CE = 0 V, VGE = ±20 V ±100 nA V CE(sat) I C = 12 A, VGE = 15 V 2.7 3.0 V Note 2 T J=125°C 2.1 V DS99149A(11/04) HiPerFASTTM IGBT C2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface IXGC 16N60C2 IXGC 16N60C2D1 V CES = 600 V I C25 =20 A V CE(sat) = 3.0 V t fi(typ) =35 ns D1 G C E ISOPLUS 220TM (IXGC) Isolated back surface* Features DCB Isolated mounting tab UL recognized (E153432) Meets TO-273 package Outline High current handling capability MOS Gate turn-on - drive simplicity Epoxy meets UL94V-0 flammability classification Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications E153432 Preliminary Data Sheet |
同様の部品番号 - IXGC16N60C2 |
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同様の説明 - IXGC16N60C2 |
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