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BD239 データシート(PDF) 2 Page - Continental Device India Limited

部品番号 BD239
部品情報  PLASTIC POWER TRANSISTORS
PDF  3 Pages
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メーカー  CDIL [Continental Device India Limited]
ホームページ  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BD239 データシート(HTML) 2 Page - Continental Device India Limited

  BD239 Datasheet HTML 1Page - Continental Device India Limited BD239 Datasheet HTML 2Page - Continental Device India Limited BD239 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
IC
max.
2.0
A
Collector current (Peak value)
ICM
max.
4.0
A
Base current
IB
max.
0.6
A
Total power dissipation upto TA=25°C
Ptot
max.
2.0
W
Derate above 25°C
max.
0.016
W/°C
Total power dissipation upto TC=25°C
Ptot
max.
30
W
Derate above 25°C
max.
0.24
W/°C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
–65 to +150
ºC
THERMAL RESISTANCE
From junction to case
Rth j–c
4.167
°C/W
From junction to ambient
Rth j–a
62.5
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
239 239A 239B 239C
240 240A 240B 240C
Collector cutoff current
IB = 0; VCE = 30 V
ICEO
max. 0.3
0.3
mA
IB = 0; VCE = 60 V
ICEO
max. –
0.3
0.3
mA
VBE = 0; VCE = VCEO
ICES
max.
0.2
mA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
1.0
mA
Breakdown voltages
IC = 30 mA; IB = 0
VCEO(sus)* min. 45
60
80
100
V
IC = 1 mA; IE = 0
VCBO
min. 55
70
90
115
V
IE = 1 mA; IC = 0
VEBO
min.
5.0
V
Saturation voltage
IC = 1 A; IB = 0.2 A
VCEsat*
max.
0.7
V
Base emitter on voltage
IC = 1 A; VCE = 4 V
VBE(on)* max.
1.3
V
D.C. current gain
IC = 0.2 A; VCE = 4 V
hFE*
min.
40
IC = 1 A; VCE = 4 V
hFE*
min.
15
Small signal current gain
IC = 0.2 A; VCE = 10 V; f = 1 KHz
hfe
min.
20
Transition frequency
IC = 0.2 A; VCE = 10 V; f = 1 MHz
fT (1)
min.
3
MHz
* Pulse test: pulse width
≤ 300 µs; duty cycle ≤ 2%
(1) fT = |hfe|• ftest
BD239, BD239A, BD239B, BD239C
BD240, BD240A, BD240B, BD240C



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