ACT5880 datasheet(46/87 Pages) ACTIVE-SEMI

46 / 87 page

ACT5880

Rev 2, 03-Sep-13

- 46 -

www.active-semi.com

ActivePMU

TM and ActivePathTM are trademarks of Active-Semi.

I2CTM is a trademark of NXP.

Active-Semi Confidential―Do Not Copy or Distribute

SYSTEM CONTROL ELECTRICAL CHARACTERISTICS

(VVBAT = 3.6V, TA = 25°C, unless otherwise specified.)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Operation Range

VVSYS

2.6

5.5

Operation Range

VCHGIN

4.2

UVLO Threshold Voltage

VVSYS Rising

2.4

2.5

2.6

UVLO Hysteresis

VVSYS Falling

0.2

SYSLEV Programming Range

VVSYS, for SYSLEV[3:0]=0000 to 1111,

and VVBAT>VUVLO

0.1

SYSLEV Hysteresis

VVSYS Rising

0.2

Voltage Reference

TA = -40°C to +85°C

1.2

Voltage Reference Accuracy

LOWIQ[ ] = 0

-0.5

0.5

LOWIQ[ ] = 1

-1.5

1.5

Reset Time-out

TRST[ ] = 0

260

TRST[ ] = 1

Oscillator Frequency

1.8

2.2

MHz

IO Logic High Input

HFPWR,

PWRHLD,

nIRQ, nRSTO,

nPBSTAT

VVBAT=2.5V to 5.5V, TA = -40°C to 85°C.

1.4

IO Logic Low Input

0.4

IO Leakage Current

0-5.5V applied.

-1

μA

IO Output Low

Sinking 10mA.

0.3

Shutdown Current

All circuit blocks off

μA

No Load Current

Deep sleep: REG2 in linear mode, the

VBBAT and the VALIVE are on, the RTC is

disabled, VVSYS=4.0V.

Thermal Shutdown Temperature

Temperature rising

160

°C

Thermal Shutdown Hysteresis

Temperature falling

Note:

See the I2C INTERFACE ELECTRICAL CHARACTERISTICS for SCL and SDA specifications.

See the TYPICAL PERFORMANCE CHARACTERISTICS for:

The Reference Voltage Line Regulation.

The Reference Voltage Temperature Coefficient.

The Oscillator Frequency Line Voltage Pulling.

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