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ZXGD3006 データシート(PDF) 2 Page - Diodes Incorporated

部品番号 ZXGD3006
部品情報  High current 40V Gate Driver reduces IGBT switching losses
PDF  2 Pages
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メーカー  DIODES [Diodes Incorporated]
ホームページ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXGD3006 データシート(HTML) 2 Page - Diodes Incorporated

  ZXGD3006 Datasheet HTML 1Page - Diodes Incorporated ZXGD3006 Datasheet HTML 2Page - Diodes Incorporated  
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www.diodes.com
New Product
Announcement
ZXGD3006E6
Issue Number | 001
June 2011
High current 40V Gate Driver
reduces IGBT switching losses
Typical Application Areas
DC-AC Inverters
Solar
Wind
Fuel cells
Power Supply Unit
Switch-Mode (SMPS)
Power Factor Correction (PFC)
MOSFET PFC driving
>500W PSU
Telecom & Server PSU
Motor Drive
Industrial motors
Intelliegent Power Module (IPM)
H-Bridges
1,2 & 3 phase
Plasma Display Panel
Energy Recovery System
0
100 200 300 400 500 600 700 800
0
5
10
15
V
IN = 0 to 15V
V
CC
= 15V
V
EE
= 0V
R
IN
= 1k
Ω
C
L = 10nF
R
L = 0.18Ω
R
SOURCE
= 0
Ω
R
SINK
= 0
Ω
V
OUT
Symmetric Source and Sink Resistors
Time (ns)
V
IN
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-20
-15
-10
-5
0
5
10
15
20
V
IN = -18 to 20V
V
CC
= 20V
V
EE= -18V
R
IN
= 1k
Ω
C
L = 10nF
R
L
= 0.18
Ω
R
SOURCE
= 4.7
Ω
R
SINK
= 0
Ω
Asymmetric Source and Sink Resistors
V
IN
V
OUT
Time (
µs)
Circuit example of driving a MOSFET
Application example of the ZXGD3006 driving the gate of a
MOSFET from 0 to +15V with RSOURCE = RSINK = 0
Switching Time Characteristic
Circuit example of driving an IGBT
Application example of ZXGD3006 driving the gate of an IGBT with
independent ton and toff using asymmetric RSOURCE and RSINK In
addition, the gate is driven negative to -18V to prevent dV/dt induced
false triggering.
Switching Time Characteristic



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