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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 04 — 17 February 2005

4 of 10

Philips Semiconductors

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 k

Ω, R2 = open

5.

Limiting values

[1]

Refer to standard mounting conditions.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60

µm copper strip line.

6.

Thermal characteristics

[1]

Refer to standard mounting conditions.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60

µm copper strip line.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

5

V

output current (DC)

-

100

mA

peak collector current

-

100

mA

total power dissipation

SOT416

[1] -

150

mW

SOT346

[1] -

250

mW

SOT883

[2] [3] -

250

mW

SOT54

[1] -

500

mW

SOT23

[1] -

250

mW

SOT323

[1] -

200

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

SOT416

[1] -

-

833

K/W

SOT346

[1] -

-

500

K/W

SOT883

[2] [3] -

-

500

K/W

SOT54

[1] -

-

250

K/W

SOT23

[1] -

-

500

K/W

SOT323

[1] -

-

625

K/W