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BF821 データシート(PDF) 2 Page - General Semiconductor |
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BF821 データシート(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage BF821 at –IC = 100 µA, IE = 0 BF823 –V(BR)CBO –V(BR)CBO 300 250 – – – – V V Collector-Emitter Breakdown Voltage BF823 at –IC = 10 mA, IB = 0 –V(BR)CEO 250 – – V Collector-Emitter Breakdown Voltage BF821 at RBE = 2.7 kΩ, –IC = 10 mA –V(BR)CER 300 – – V Emitter-Base Breakdown Voltage at –IE = 100 µA, IC = 0 –V(BR)EBO 5–– V Collector-Base Cutoff Current at –VCB = 200 V, IE = 0 –ICBO ––10 nA Collector-Emitter Cutoff Current at RBE = 2.7 kΩ, –VCE = 250 V at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C –ICER –ICER 50 10 nA µA Collector Saturation Voltage at –IC = 30 mA, –IB = 5 mA –VCEsat ––0.8 V DC Current Gain at –VCE = 20 V, –IC = 25 mA hFE 50 – – – Gain-Bandwidth Product at –VCE = 10 V, –IC = 10 mA fT 60 – – MHz Feedback Capacitance at –VCE = 30 V, –IC = 0, f = 1 MHz Cre ––1.6 pF Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W 1) Device on fiberglass substrate, see layout BF821, BF823 Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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