ES2B datasheet(1/2 Pages) GE

部品番号	ES2B

部品情報	SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

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メーカー	GE [General Semiconductor]

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ES2A THRU ES2D

SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts

Forward Current - 2.0 Amperes

FEATURES

¨ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

¨ For surface mount applications

¨ Low profile package

¨ Built-in strain relief

¨ Ideal for automated placement

¨ Easy pick and place

¨ Glass passivated chip junction

¨ Superfast recovery times for high efficiency

¨ Low power loss, high efficiency

¨ High temperature soldering: 250¡C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AA molded plastic body over passivated chip

Terminals: Solder plated solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Weight: 0.003 ounces, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified.

SYMBOLS

ES2A

ES2B

ES2C

ES2D

UNITS

Device marking code

EA

EB

EC

ED

Maximum repetitive peak reverse voltage

VRRM

50

100

150

200

Volts

Maximum RMS voltage

VRMS

35

70

105

140

Volts

Maximum DC blocking voltage

VDC

50

100

150

200

Volts

Maximum average forward rectified current

at TL=110¡C

I(AV)

2.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on

IFSM

50.0

Amps

rated load (JEDEC Method) at TL=110¡C

Maximum instantaneous forward voltage at 2.0A

VF

0.90

Volts

Maximum DC reverse current

TA=25¡C

10.0

at rated DC blocking voltage

TA=100¡C

IR

350

mA

Maximum reverse recovery time (NOTE 1)

trr

20.0

ns

Maximum reverse recovery time

TJ=25¡C

30.0

(NOTE 2)

TJ=100¡C

trr

50.0

ns

Maximum stored charge

TJ=25¡C

10.0

(NOTE 2)

TJ=100¡C

Qrr

25.0

nC

Typical junction capacitance (NOTE 3)

CJ

18.0

pF

Maximum thermal resistance (NOTE 4)

RQJA

75.0

RQJL

20.0

¡C/W

Operating junction and storage temperature range

TJ, TSTG

-55 to +150

¡C

NOTES:

(1) Reverse recovery test conditions: IF=0.5A, IR= I.0A, lrr=0.25A

(2) Trr and Qrr measured at: IF=2.0A, VR=30V, di/dt=50A/

ms, Irr=10% IR

(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts

(4) Units mounted on P.C.B. 5.0 x 5.0mm (0.013mm thick) land areas

2/10/99

0.160 (4.06)

0.180 (4.57)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.205 (5.21)

0.220 (5.59)

0.084 (2.13)

0.096 (2.44)

0.077 (1.95)

0.086 (2.20)

0.130 (3.30)

0.155 (3.94)

MAX.

DO-214AA

Dimensions in inches and (millimeters)

同様の部品番号 - ES2B

メーカー	部品番号	データシート	部品情報
Jinan Gude Electronic D...	ES2B	173Kb / 3P	2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS
Shanghai Sunrise Electr...	ES2B	17Kb / 1P	SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER
Diodes Incorporated	ES2B	45Kb / 2P	2.0A SURFACE MOUNT SUPER-FAST RECTIFIER DS14002 Rev. F-2
Fuji Electric	ES2B	750Kb / 1P	2 AMP SURFACE MOUNT GLASS SUPER FAST RECOVERY RECTIFIER
Micro Commercial Compon...	ES2B	902Kb / 3P	2 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts

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