STD65N3LLH5 datasheet(5/17 Pages) STMICROELECTRONICS

部品番号	STD65N3LLH5

部品情報	N-channel 30 V, 0.0061, 65 A, DPAK, IPAK STripFET V Power MOSFET

PDF	17 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

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5 / 17 page

STD65N3LLH5, STU65N3LLH5

Electrical characteristics

Doc ID 17281 Rev 1

5/17

Table 6.

Switching on/off (resistive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD=10 V, ID= 65 A,

RG=4.7 Ω, VGS= 10 V

(Figure 13 and

Figure 18)

8.6

11.2

td(off)

Turn-off delay time

Fall time

VDD=10 V, ID= 25 A,

RG=4.7 Ω, VGS= 10 V

(Figure 13 and

Figure 18)

32.4

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%.

260

VSD

Forward on voltage

ISD=32.5 A, VGS=0

1.1

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=32.5 A,

di/dt =100 A/µs,

VDD=20 V, (Figure 15)

1.4

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