GSMBT4403 datasheet(1/2 Pages) ETL

部品番号	GSMBT4403

部品情報	P N P E P I T A X I A L P L A N A R T R A N S I S T O R

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メーカー	ETL [E-Tech Electronics LTD]

ホームページ	http://e-tech.com.hk

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ISSUED DATE :2004/12/20

REVISED DATE :

GSM BT4403

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBT4403 is designed for general purpose switching and amplifier applications.

Features

&Complementary to GSMBT4401

&High DC Current Gain: 100-300 at 150mA

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage at Ta=25 :

VCBO

-40

V

Collector to Emitter Voltage at Ta=25 :

VCEO

-40

V

Emitter to Base Voltage at Ta=25 :

VEBO

-5

V

Collector Current at Ta=25 :

IC

-600

mA

Total Power Dissipation at Ta=25 :

PD

225

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

V

IC=-100uA

BVCEO

-40

-

V

IC=-1mA

BVEBO

-5

-

V

IE=-10uA

ICEX

-

-100

nA

VCE=-35V, VBE=-0.4V

*VCE(sat)1

-

-400

mV

IC=-150mA, IB=-15mA

*VCE(sat)2

-

-750

mV

IC=-500mA, IB=-50mA

*VBE(sat)1

-

-950

mV

IC=-150mA, IB=-15mA

*VBE(sat)2

-

-1.3

V

IC=-500mA, IB=-50mA

*hFE1

30

-

VCE=-1V, IC=-0.1mA

*hFE2

60

-

VCE=-1V, IC=-1mA

*hFE3

100

-

VCE=-1V, IC=-10mA

*hFE4

100

-

300

VCE=-2V, IC=-150mA

*hFE5

20

-

VCE=-2V, IC=-500mA

fT

200

-

MHz

VCE=-10V, IC=-20mA, f=100MHz

Cob

-

8.5

pF

VCE=-10V, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

同様の部品番号 - GSMBT4403

メーカー	部品番号	データシート	部品情報
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