2SB1002 datasheet(2/6 Pages) HITACHI

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2SB1002

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

–70

Collector to emitter voltage

CEO

–50

Emitter to base voltage

EBO

–6

Collector current

–1

Collector peak current

C(peak) *

–1.5

Collector power dissipation

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5

× 20 × 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

–70

—

C = –10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

–50

—

C = –1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

–6

——V

E = –10 µA, IC = 0

Collector cutoff current

CBO

—

–0.1

µAV

CB = –50 V, IE = 0

Emitter cutoff current

EBO

—

–0.1

µAV

EB = –4 V, IC = 0

DC current transfer ratio

FE*

100

—

320

CE = –2 V, IC = –0.1 A

Collector to emitter saturation

voltage

CE(sat)

—

–0.6

C = –1 A,

B = –0.1 A (Pulse test)

Base to emitter saturation

voltage

BE(sat)

—

–1.2

C = –1 A,

B = –0.1 A (Pulse test)

Gain bandwidth product

—

150

—

MHz

CE = –2 V,

C = –10 mA (Pulse test)

Collector output capacitance

Cob

—

CB = –10 V, IE = 0,

f = 1 MHz

Note:

1. The 2SB1002 is grouped by h

FE as follows.

Mark

100 to 200

160 to 320

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