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2SC2776 データシート(PDF) 2 Page - Hitachi Semiconductor

部品番号 2SC2776
部品情報  Silicon NPN Epitaxial Planar
PDF  5 Pages
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メーカー  HITACHI [Hitachi Semiconductor]
ホームページ  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC2776 データシート(HTML) 2 Page - Hitachi Semiconductor

  2SC2776 Datasheet HTML 1Page - Hitachi Semiconductor 2SC2776 Datasheet HTML 2Page - Hitachi Semiconductor 2SC2776 Datasheet HTML 3Page - Hitachi Semiconductor 2SC2776 Datasheet HTML 4Page - Hitachi Semiconductor 2SC2776 Datasheet HTML 5Page - Hitachi Semiconductor  
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2SC2776
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
4V
Collector current
I
C
30
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
4—
—
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.5
µAV
CB = 10 V, IE = 0
DC current transfer ratio
h
FE*
1
35
—
200
V
CE = 6 V, IC = 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.8
1.2
V
I
C = 10 mA, IB = 1 mA
Collector output capacitance
Cob
—
1.1
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
—
320
—
MHz
V
CE = 6 V, IC = 1 mA
Noise figure
NF
—
5.5
—
dB
V
CE = 6 V, IC = 1 mA,
f = 100 MHz, R
g = 50 Ω
Power gain
PG
—
17
—
dB
V
CE = 6 V, IC = 1 mA,
f = 100 MHz, R
g = 100 Ω,
R
L = 550 Ω, Unneutralized
Note:
1. The 2SC2776 is grouped by h
FE as follows.
Grade
A
B
C
Mark
VA
VB
VC
h
FE
35 to 70
60 to 120
100 to 200
See characteristic curves of 2SC1342.



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