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FEATURES 

DIRECT REPLACEMENT FOR SILICONIX SSTDPAD5 

HIGH ON ISOLATION 

20fA 

ULTRALOW LEAKAGE ≤ 5 pA 

REVERSE BREAKDOWN VOLTAGE 

REVERSE CAPACITANCE 

ABSOLUTE MAXIMUM RATINGS  

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

500mW 

MAXIMUM CURRENT

Forward Current (Note 1) 

50mA 

 

 

SSTDPAD5 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Reverse Breakdown Voltage ‐45 

‐‐ 

‐‐ 

V 

IR = ‐1µA 

Forward Voltage 

‐‐ 

0.8 

1.5 

V 

IF = 1mA 

Total Reverse Capacitance 

‐‐ 

‐‐ 

2.0 

pF 

‐‐ 

‐‐ 

0.5 

pF 

Maximum Reverse Leakage Current 

‐‐ 

‐‐ 

‐100 

pA 

The SSTDPAD5 extremely low-leakage monolithic dual

diode provides a superior alternative to conventional

diode technology when reverse current (leakage) must

be minimized. In addition the monolithic dual

construction allows excellent capacitance matching per

diode. The SSTDPAD5 features a leakage current of -5

pA and is well suited for use in applications such as

input protection for operational amplifiers.

SSTDPAD5 Benefits:

Negligible Circuit Leakage Contribution

Circuit “Transparent” Except to Shunt

High-Frequency Spikes

Simplicity of Operation

SSTDPAD5 Applications:

Op Amp Input Protection

Multiplexer Overvoltage Protection

The SSTDPAD5 is a low leakage Monolithic Dual Pico-Amp Diode

SSTDPAD5

LOW LEAKAGE

PICO-AMP DUAL DIODE

Available Packages:

SSTDPAD5 in SOIC

SSTDPAD5 available as bare die

Please contact Micross for full package and die dimensions

Linear Systems replaces discontinued Siliconix SSTDPAD5

Notes:

1. Absolute maximum ratings are limiting values above which SSTDPAD5 serviceability may be impaired.

Micross Components Europe

Tel: +44 1603 788967

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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