Electrical characteristics

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP

6/18

Doc ID 8527 Rev 7

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise time

(see Figure 20)

-

22

14

-

ns

ns

Turn-off delay time

Fall time

(see Figure 20)

-

61

12

-

ns

ns

Off-voltage rise time

Fall time

Cross-over time

(see Figure 20)

-

10

9

20

-

ns

ns

ns

Table 7.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown

voltage

Igs=±1mA

(open drain)

30

-

-

V

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current

(pulsed)

-

10

40

A

A

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

-1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100 A/µs,

-

570

4.5

16

ns

µC

A