HAF1002(L), HAF1002(S)

3

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

I

D1

–7

——A

V

Drain current

I

D2

—

—

–10

mA

V

Drain to source breakdown

voltage

V

(BR)DSS

–60

—

—

V

I

Gate to source breakdown

voltage

V

(BR)GSS+

–16

—

—

V

I

Gate to source breakdown

voltage

V

(BR)GSS–

3

——V

I

Gate to source leak current

I

GSS+1

—

—

–100

µAV

I

GSS+2

—

—

–50

µAV

I

GSS+3

——–1

µAV

I

GSS–

—

—

100

µAV

Input current (shut down)

I

GS(op)1

—

–0.8

—

mA

V

I

GS(op)1

—

–0.35

—

mA

V

Zero gate voltege drain current I

DSS

—

—

–250

µAV

Gate to source cutoff voltage

V

GS(off)

–1.1

—

–2.25

V

I

Static drain to source on state

resistance

R

DS(on)

—

100

130

m

Ω

I

Note3

Static drain to source on state

resistance

R

DS(on)

—

7090m

Ω

I

V

Note3

Forward transfer admittance

|y

5

10

—

S

I

Note3

Output capacitance

Coss

—

610

—

pF

V

f = 1 MHz

Turn-on delay time

t

d(on)

—

7.5

—

µsI

Rise time

t

r

—36

—

µsR

Turn-off delay time

t

d(off)

—32

—

µs

Fall time

t

f

—29

—

µs

Body–drain diode forward

voltage

V

DF

—

–1.0

—

V

I

Body–drain diode reverse

recovery time

t

rr

—

200

—

ns

I

diF/ dt =50A/

µs

Over load shut down

t

os1

—

3.7

—

ms

V

operation time

Note4

t

os2

—1

—ms

V

Note:

3. Pulse test

4. Including the junction temperature rise of the over loaded condition.

• See characteristics curve of HAF1001.