SSF80100 datasheet(1/8 Pages) SILIKRON

部品番号	SSF80100

部品情報	Advanced MOSFET process technology

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メーカー	SILIKRON [Silikron Semiconductor Co.,LTD.]

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SSF80100

©Silikron Semiconductor CO.,LTD.

2014.10.20

Version : 1.0

page 1 of 8

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

80 ①

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

70 ①

IDM

Pulsed Drain Current ②

320

PD @TC = 25°C

Power Dissipation ③

200

W

Linear Derating Factor

2.0

W/°C

VDS

Drain-Source Voltage

75

V

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy @ L=0.3mH

375

mJ

IAS

Avalanche Current @ L=0.3mH

50

A

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

VDSS

75V

RDS(on)

8mΩ(typ.)

ID

80A ①

TO220

Schematic diagram



Advanced MOSFET process technology



Special designed for motor control, PWM, load

switching etc.



Ultra low on-resistance with low gate charge



Excellent Qgd/Qgs rating



Fast switching and reverse body recovery



175℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application, motor control and a wide variety of other applications.

Marking and pin

Assignment

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