SSFD4004 datasheet(1/8 Pages) SILIKRON

部品番号	SSFD4004

部品情報	Advanced MOSFET process technology

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SSFD4004

©Silikron Semiconductor CO.,LTD.

2012.02.01

Version : 1.0

page 1 of 8

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

145①

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

100①

IDM

Pulsed Drain Current ②

580

PD @TC = 25°C

Power Dissipation ③

153

W

Linear Derating Factor

1.02

W/°C

VDS

Drain-Source Voltage

40

V

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy @ L=0.1mH

281.3

mJ

IAS

Avalanche Current @ L=0.1mH

75

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

VDSS

40V

RDS(on)

3.2mohm(typ.)

ID

145A

TO-252

Marking and pin

Assignment

Schematic diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of other applications

同様の部品番号 - SSFD4004

メーカー	部品番号	データシート	部品情報
GOOD-ARK Electronics	SSFD4004	1Mb / 7P	40V N-Channel MOSFET

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