SSFD6035

V =-48V,V =0V

-1

μA

Zero Gate Voltage Drain Current

DS

GS

Gate-Body Leakage Current

I

V =±20V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

-1

-1.8

-2.5

V

V =-10V, I

GS

31

40

mΩ

Drain-Source On-State Resistance

V =-4.5V, I

GS

42

55

mΩ

Forward Transconductance

g

V =-5V,I

FS

DS

5

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

3060

PF

lss

Output Capacitance

300

PF

V =-30V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

205

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

14

nS

d(on)

Turn-on Rise Time

t

20

nS

r

Turn-Off Delay Time

40

nS

V =-30V,V =-10V,R

Turn-Off Fall Time

DS

GS

19

nS

Total Gate Charge

Q

48

nC

g

Gate-Source Charge

11

nC

V =-30V,I

Gate-Drain Charge

DS

=-10V

GS

10

nC

Body Diode Reverse Recovery Time

T

40

nS

rr

Body Diode Reverse Recovery Charge

Q

56

nC

rr

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =-1A

-0.72

-1

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

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