HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6030

Issued Date : 1998.07.01

Revised Date : 2002.08.13

Page No. : 1/4

HJ112

HSMC Product Specification

HJ112

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HJ112 is designed for use in general purpose amplifier and low-

speed switching applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C)..................................................................................... 20 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 100 V

VCEO Collector to Emitter Voltage .................................................................................... 100 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current .............................................................................................................. 4 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

100

-

-

V

IC=1mA

BVCEO

100

-

-

V

IC=30mA

ICBO

-

-

10

uA

VCB=80V

ICEO

-

-

20

uA

VCE=50V

IEBO

-

-

2

mA

*VCE(sat)1

-

-

2.5

V

IC=2A, IB=8mA

*VBE(on)

-

-

2.8

V

IC=2A, VCE=3V

*hFE1

500

-

-

IC=0.5A, VCE=3V

*hFE2

1

-

12

K

IC=2A, VCE=3V

*hFE3

200

-

-

IC=4A, VCE=3V

Cob

-

-

100

pF

VCB=10V

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

TO-252