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BAV19W データシート(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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BAV19W データシート(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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1 / 2 page ![]() Page:P2-P1 Plastic-Encapsulate Diodes FAST SWITCHING DIODES FEATURES Fast switching speed Surface mount package ideally suited for automatic insertion MARKING: BAV19W : A8 BAV20W: T2 BAV21W: T3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol BAV19W BAV20W BW Unit Non-Repetitive Peak reverse voltage VRM 120 200 250 V Peak Repetitive Peak reverse voltage VRRM 100 150 250 V Working Peak Reverse Voltage VRRM DC Blocking VR RMS Reverse Voltage VR(RMS) 71 106 141 V Forward Continuous Current IFM 400 mA Average Rectified Output Current IO 200 mA Peak forward surge current @=1.0ms @=1.0s IFSM IFSM 2.5 0.5 A A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation Pd 500 mW Ambient Resistance Junction to Ambient RθJA 250 /W Storage temperature TSTG -65-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF1 VF2 1.0 1.25 V V IF=100mA IF=200mA Reverse current BAV19W IR 0.1 μA VR=100V BAV20W IR 0.1 μA VR=150V BAV21W IR 0.1 μA VR=200V Capacitance between terminals CT 5 pF VR=0,f=1MHz Reverse Recovery Time trr 50 ns IR=IF=30mA Irr=0.1*IR,RL=100Ω SOD-123 - + BAV19W/20W/21W MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ |
同様の部品番号 - BAV19W |
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同様の説明 - BAV19W |
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