IDT7132LA55L48B datasheet(10/16 Pages) IDT

10 / 16 page

IDT7132SA/LA and IDT 7142SA/LA

High Speed 2K x 8 Dual Port Static RAM

Military, Industrial and Commercial Temperature Ranges

tWC

ADDRESS

DATA IN

tAS

(6)

tEW

(2)

tWR

(3)

tDW

tDH

tAW

2692 drw 10

Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing)(1,5,8)

Timing Waveform of Write Cycle No. 2, (CE Controlled Timing)(1,5)

NOTES:

1. R/W or CE must be HIGH during all address transitions.

2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W = VIL.

3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.

4. During this period, the l/O pins are in the output state and input signals must not be applied.

5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.

6. Timing depends on which enable signal (CE or R/W) is asserted last.

7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load

(Figure 2).

8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the

bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.

tWC

ADDRESS

DATA OUT

DATA IN

tAS

(6)

tOW

tDW

tDH

tAW

tWP

(2)

tHZ

(7)

(4)

tWZ

(7)

tHZ

(7)

2692 drw 09

tWR

(3)

IDT7132LA55L48B データシート(PDF) 10 Page - Integrated Device Technology

IDT7132LA55L48B データシート(HTML) 10 Page - Integrated Device Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

データシートダウンロード