2SB766-R datasheet(1/2 Pages) KEXIN

部品番号	2SB766-R

部品情報	PNP Transistors

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メーカー	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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1

Transistors

PNP Transistors

2SB766

■

Features

●

Large collector power dissipation PC

●

Complimentary to 2SD874.

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-30

Collector- emitter breakdown voltage

VCEO

Ic= -2 mA， IB=0

-25

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -20 V , IE=0

-100

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-100

Collector-emitter saturation voltage

VCE(sat) IC=-500 mA, IB=-50mA

-0.2

-0.4

Base - emitter saturation voltage

VBE(sat) IC=-500 mA, IB=-50mA

-0.85 -1.2

hFE(1)

VCE= -10V, IC= -500mA

85

340

hFE(2)

VCE=- 5V, IC= -1A

50

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

20

30

pF

Transition frequency

fT

VCE= -10V, IC= -50mA,f=200MHz

200

MHz

DC current gain

V

nA

V

■

Classification of hfe(1)

Type

2SB766-Q

2SB766-R

2SB766-S

Range

85-170

120-240

170-340

Marking

AQ

AR

AS

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-30

Collector - Emitter Voltage

VCEO

-25

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1

Collector Current - Pulse

ICP

-1.5

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

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