FSYA450D datasheet(4/8 Pages) INTERSIL

部品番号	FSYA450D

部品情報	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

PDF	8 Pages

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メーカー	INTERSIL [Intersil Corporation]

ホームページ	http://www.intersil.com/cda/home

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4 / 8 page

4-4

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

TC, CASE TEMPERATURE (

oC)

150

100

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

0.1

1000

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

100

µs

1ms

10ms

TC = 25

CHARGE

QGD

QGS

12V

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250

µs, VGS = 12V, ID = 7A

0.1

0.01

10-5

10-4

10-3

10-2

10-1

100

101

t, RECTANGULAR PULSE DURATION (s)

0.001

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

SINGLE PULSE

PDM

0.01

0.02

0.05

0.1

0.2

0.5

FSYA450D, FSYA450R

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