FSYA9150D3 datasheet(4/8 Pages) INTERSIL

部品番号	FSYA9150D3

部品情報	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

PDF	8 Pages

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メーカー	INTERSIL [Intersil Corporation]

ホームページ	http://www.intersil.com/cda/home

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4 / 8 page

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

TC, CASE TEMPERATURE (

oC)

150

100

-50

-100

-1

VDS, DRAIN TO SOURCE VOLTAGE (V)

-10

100

-300

TC = 25

100

µs

1ms

10ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

CHARGE

QGD

QGS

BASIC GATE CHARGE WAVEFORM

-12V

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250ms, VGS = -12V, ID = 15A

10-5

10-4

10-3

10-2

10-1

100

101

0.001

0.01

0.1

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x Z

θJC + TC

SINGLE PULSE

0.01

0.02

0.2

0.1

0.05

0.5

t, RECTANGULAR PULSE DURATION (s)

FSYA9150D, FSYA9150R

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