3

Turn-On Delay Time (Note 5)

See Figure 14

-

4

-

ns

Rise Time (Note 5)

-

5

-

ns

Turn-Off Delay Time (Note 5)

-12

-

ns

Fall Time (Note 5)

-6

-

ns

Total Gate Charge (Note 5)

See Figures 16 and 17

-

10.5

12.0

nC

Gate-Source Charge (Note 5)

-

1.4

2.0

nC

Gate-Drain Charge (Note 5)

-

4.9

5.5

nC

Short-Circuit Input Capacitance,

Common Source

-

230

-

pF

Short-Circuit Output Capacitance,

Common Source for Upper FET

-

150

-

pF

Short Circuit Output Capacitance

Common Source for Lower FET

-

225

-

pF

Short-Circuit Reverse Transfer

Capacitance, Common Source

-40

-

pF

Thermal Resistance Junction to Case

-

-

2.7

Thermal Resistance Junction to Ambient

-

-

60

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source-Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

SOURCE-TO-DRAIN DIODE SPECIFICATIONS (Across Z1 and Z2)

Forward Voltage (Note 4)

-

1.05

1.25

V

Reverse Recovery Time (Across Z1)

-

50

-

ns

Reverse Recovery Time (Across Z2)

-

75

-

ns

SOURCE2-TO-DRAIN1 DIODE SPECIFICATIONS D (Across D1)

Forward Voltage (Note 4)

-

8.5

9.5

V

Reverse Recovery Time

-

200

-

ns

DEVICE MATCHING

Drain-Source On Resistance Match

90

-

%

NOTES:

4. Pulse test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

5. Independent of operating temperature.

HIP2060