RFD3N08LSM datasheet(3/8 Pages) INTERSIL

部品番号	RFD3N08LSM

部品情報	3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

メーカー	INTERSIL [Intersil Corporation]

ホームページ	http://www.intersil.com/cda/home

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3 / 8 page

6-28

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. PEAK CURRENT CAPABILITY

TC, CASE TEMPERATURE (

oC)

100

125

150

175

0.2

0.4

0.6

0.8

1.0

1.2

1.0

0.5

100

125

150

1.5

TC, CASE TEMPERATURE (

oC)

3.5

3.0

2.5

2.0

175

10-5

10-4

10-3

10-2

10-1

100

101

t, RECTANGULAR PULSE DURATION (s)

0.1

0.01

0.5

0.2

0.1

0.05

0.02

0.01

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

0.1

VDSS MAX = 80V

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

100

µs

200

1ms

10ms

100ms

TC = 25

TJ = MAX RATED

t, PULSE WIDTH (s)

10-5

10-4

10-3

10-2

10-1

100

101

VGS = 5V

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

I = I25

175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

TC = 25

RFD3N08L, RFD3N08LSM

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