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ACE4702 データシート(PDF) 11 Page - ACE Technology Co., LTD.

部品番号 ACE4702
部品情報  2 Cell Li-ion Battery Charger IC
PDF  15 Pages
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メーカー  ACE [ACE Technology Co., LTD.]
ホームページ  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE4702 データシート(HTML) 11 Page - ACE Technology Co., LTD.

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ACE4702
2 Cell Li-ion Battery Charger IC
VER 1.1
11
Use Table 2 as a guide for selecting the correct inductor value for your application.
Charge Current
Input Voltage
Inductor Value
1A
>20V
40uH
<20V
30uH
2A
>20V
30uH
<20V
20uH
3A
>20V
20uH
<20V
15uH
4A
>20V
15uH
<20V
10uH
5A
>20V
10uH
<20V
8uH
Table 2 Guide to Select Inductor Value
MOSFET Selection
The ACE4702 uses a P-channel power MOSFET switch. The MOSFET must be selected to meet the
efficiency or power dissipation requirements of the charging circuit as well as the maximum temperature
of the MOSFET.
The peak-to-peak gate drive voltage is set internally, this voltage is typically 5.8V. Consequently,
logic-level threshold MOSFETs must be used. Pay close attention to the BVDSS specification for the
MOSFET as well; many of the logic level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFET includes the “on” resistance Rds(on), total gate charge Qg,
reverse transfer capacitance CRSS, input voltage and maximum charge current.
The MOSFET power dissipation at maximum output current is approximated by the equation:
Where:
Pd is the power dissipation of the power MOSFET
VBAT is the maximum battery voltage
VCC is the minimum input voltage
Rds(on) is the power MOSFET’s on resistance at room temperature
ICH is the charge current
dT is the temperature difference between actual ambient temperature and room temperature(25℃) In
addition to the I
2R
ds(on) loss, the power MOSFET still has transition loss, which are highest at the highest
input voltage. Generally speaking, for VIN<20V, the I
2R
ds(on) loss may be dominant, so the MOSFET with
lower Rds(on) should be selected for better efficiency; for VIN>20V, the transition loss may be dominant, so
the MOSFET with lower CRSS can provide better efficiency. CRSS is usually specified in the MOSFET
characteristics; if not, then CRSS can be calculated using CRSS = QGD
/ΔV
DS.
The MOSFETs such as ACE9435, ACE4443, ACE7401, ACE4409 can be used. The part numbers listed
above are for reference only, the users can select the right MOSFET based on their requirements.



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