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IRFP460AS データシート(PDF) 1 Page - International Rectifier |
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IRFP460AS データシート(HTML) 1 Page - International Rectifier |
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1 / 8 page ![]() www.irf.com 1 01/17/01 IRFP460AS SMPS MOSFET HEXFET® Power MOSFET VDSS Rds(on) max ID 500V 0.27 Ω 20A Typical SMPS Topologies: l Full Bridge l PFC Boost Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 80 PD @TC = 25°C Power Dissipation 280 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings Notes through
are on page 8 SMD-247 l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder plated and leadformed for surface mounting Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. This plated and leadformed version of the TO-247 package allows the package to be surface mounted in an application. Maximum Reflow Temperature 230 (Time above 183 °C should not exceed 100s) °C Benefits Applications l SMPS, UPS, Welding and High Speed Power Switching PD-94011A |
同様の部品番号 - IRFP460AS |
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同様の説明 - IRFP460AS |
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