IRG4PH50S datasheet(2/8 Pages) IRF

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IRG4PH50S

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Parameter

Min. Typ. Max. Units

Conditions

Total Gate Charge (turn-on)

—

167

251

IC = 33A

Qge

Gate - Emitter Charge (turn-on)

—

VCC = 400V

See Fig. 8

Qgc

Gate - Collector Charge (turn-on)

—

VGE = 15V

td(on)

Turn-On Delay Time

—

Rise Time

—

TJ = 25°C

td(off)

Turn-Off Delay Time

—

845 1268

IC = 33A, VCC = 960V

Fall Time

—

425

638

VGE = 15V, RG = 5.0

Ω

Eon

Turn-On Switching Loss

—

1.80

—

Energy losses include "tail"

Eoff

Turn-Off Switching Loss

—

19.6

—

See Fig. 9, 10, 14

Ets

Total Switching Loss

—

21.4

td(on)

Turn-On Delay Time

—

TJ = 150°C,

Rise Time

—

IC = 33A, VCC = 960V

td(off)

Turn-Off Delay Time

—

1170

—

VGE = 15V, RG = 5.0

Ω

Fall Time

—

1000

—

Energy losses include "tail"

Ets

Total Switching Loss

—

See Fig. 10,11,14

Internal Emitter Inductance

—

Measured 5mm from package

Cies

Input Capacitance

—

3600

—

VGE = 0V

Coes

Output Capacitance

—

160

—

VCC = 30V

See Fig. 7

Cres

Reverse Transfer Capacitance

—

—ƒ = 1.0MHz

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

1200

——

VVGE = 0V, IC = 250µA

V(BR)ECS

Emitter-to-Collector Breakdown Voltage

T 18

——

VVGE = 0V, IC = 1.0 A

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage

—

1.22

—

V/°CVGE = 0V, IC = 2.0 mA

—

1.47

1.7

IC = 33A

VGE = 15V

VCE(ON)

Collector-to-Emitter Saturation Voltage

—

1.75

—

IC = 57A

See Fig.2, 5

—

1.55

—

IC = 33A , TJ = 150°C

VGE(th)

Gate Threshold Voltage

3.0

—

6.0

VCE = VGE, IC = 250µA

DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage

—

-11

—

mV/°CVCE = VGE, IC = 250µA

gfe

Forward Transconductance

—

SVCE = 100V, IC = 33A

——

250

VGE = 0V, VCE = 1200V

——

2.0

VGE = 0V, VCE = 10V, TJ = 25°C

——

1000

VGE = 0V, VCE = 1200V, TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

——

±100

VGE = ±20V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

ICES

Zero Gate Voltage Collector Current

µA

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,

(See fig. 13a)

S Repetitive rating; pulse width limited by maximum

junction temperature.

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