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AN3432 データシート(PDF) 22 Page - STMicroelectronics |
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AN3432 データシート(HTML) 22 Page - STMicroelectronics |
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22 / 24 page ![]() Conclusion AN3432 22/24 Doc ID 019041 Rev 1 5 Conclusion This application note provides the means to select the best bypass diode device based on junction box or PV module specifications. This diode selection will depend on its technology trade off - forward drop voltage versus reverse current. ST offers a broad range of Schottky diode from 10 to 60 A and 20 V to 45 V ratings. Their low leakage current is a distinctive performance that has allowed more than 50 million pieces to be assembled successfully in 2011. Future trends should allow the extension of their maximum temperature to 200 °C while covering the increased maximum current up to 15 A for the stringent junction box thermal test. |
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