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AN4496 データシート(PDF) 13 Page - STMicroelectronics

部品番号 AN4496
部品情報  How to get a high power factor with the HVLED815PF device
PDF  18 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4496 データシート(HTML) 13 Page - STMicroelectronics

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DocID026370 Rev 1
13/18
AN4496
Designing a high PF wide range LED driver with the HVLED815PF
18
2.2
Operating conditions
The first step is to verify:
Maximum power output [W]:
Equation 25
POUT = IOUT * VOUT  POUT_MAX
In the European range (VIN min > 175 V)
POUT max < 15 W
In the US and Japanese range (VIN min < 175 V)
POUT max < 10 W.
2.3
Transformer design
The voltage at the ILED pin must be limited at 1.5 V.
Then for the best performance the optimal reflected voltage VRopt must be set for using all
the dynamics of the ILED pin at minimum mains.
Equation 26
Where:
_VINmin = 80% 
efficiency at minimum input voltage
VILEDx = 1.5 V
pin ILED maximum voltage
2.4
Drain source breakdown
Reflected voltage can be limited by drain-source breakdown voltage.
Equation 27
VRbrk = V(BR)DSS - 2 * VINmax -VSpike - Vtol = 800 - 2 * 265 - 150 - 80 = 200 V
Where Vtol is a margin for the components tolerance.
The value of VR lower than VRopt and VRbrk is used to calculate the primary/secondary turns
ratio n:
Equation 28
Where VFsec = secondary diode forward drop voltage.
When VR is lower than VRopt, the dynamic is not optimized but the HVLED815PF device is
working without problem.
Real value used:
n = 4.52
VR = 100 V



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