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AN2385 データシート(PDF) 11 Page - STMicroelectronics

部品番号 AN2385
部品情報  Power dissipation and its linear derating factor
PDF  14 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2385 データシート(HTML) 11 Page - STMicroelectronics

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AN2385
Pulsed drain current (IDM)
11/14
where RDSON(175°C@IDM) is the on resistance of the device at the guaranteed maximum
junction temperature and at the Pulsed Drain Current value, and that:
Equation 8
where ZTHJC is the junction to case thermal impedance at the specific operation conditions,
the maximum acceptable ZTHJC value can be achieved as:
Equation 9
Thus, considering a specific Power Pulse with a fixed duty cycle, the maximum Rectangular
Pulse Duration can be achieved.
As example, Figure 8. shows the determination of the maximum Rectangular Pulse Duration
considering a Pulsed Drain Current equal to 600A, TJMAX of 175°C, case temperature of
25°C, duty cycle of 0.02 and RDSON(175°C, IDM) equal to 20mOhm. ZTHJC can be calculated
as:
Equation 10
Figure 8.
Determination of the maximum rectangular pulse duration
In this example, the maximum Rectangular Pulse Duration equals 30usec. For power pulse
of higher duration the junction temperature overcomes 175°C and the device could fail.
It is important to highlight that the measured on resistance must be performed at the
maximum junction temperature and also at the specific Pulsed Drain Current. In fact,
increasing the drain current also RDSON increases and thus, of course, this effect must be
taken into account.
P
D
Z
THJC
TT
JMAX
25
° C
=
=
Z
THJC
T
JMAX
25
° C
R
DSON175
° CI
DM
2
,
()
------------------------------------------------
=
Z
THJC
175
° C25° C
20
10
3
600
2
-----------------------------------------------
0.021
° C
W
-------
=
=



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