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AN2386 データシート(PDF) 21 Page - STMicroelectronics |
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AN2386 データシート(HTML) 21 Page - STMicroelectronics |
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21 / 30 page ![]() AN2386 Some considerations on VTH and TVTC equations and real examples 21/30 Figure 16. DEVICE1 TVTC simulated data - comparison between different tox When the oxide thickness increases from 470Å to 500Å, the threshold voltage increases its value and also TVTC increases in absolute value and vice versa, decreases the thickness oxide from 470Å to 350Å. Now, it is possible simulate VTH and TVTC supposing that the temperature is fixed to 300K and the gate doping concentration changes in the range of 1e+18-1.5e+20cm-3 (see Figure 17. and Figure 18.). Figure 17. DEVICE1 VTH simulated data - fixing T and acting on Ng Figure 18. DEVICE1 TVTC simulated data - fixing T and acting on Ng The graph in Figure 19. and Figure 20. show VTH and TVTC trend fixing the temperature to 300K and changing Na in the range of 1e+16-6.1e+17cm -3. |
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