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AN2386 データシート(PDF) 21 Page - STMicroelectronics

部品番号 AN2386
部品情報  How to achieve the threshold voltage thermal coefficient
PDF  30 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2386 データシート(HTML) 21 Page - STMicroelectronics

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AN2386
Some considerations on VTH and TVTC equations and real examples
21/30
Figure 16.
DEVICE1 TVTC simulated data - comparison between different tox
When the oxide thickness increases from 470Å to 500Å, the threshold voltage increases its
value and also TVTC increases in absolute value and vice versa, decreases the thickness
oxide from 470Å to 350Å. Now, it is possible simulate VTH and TVTC supposing that the
temperature is fixed to 300K and the gate doping concentration changes in the range of
1e+18-1.5e+20cm-3 (see Figure 17. and Figure 18.).
Figure 17.
DEVICE1 VTH simulated data - fixing T and acting on Ng
Figure 18.
DEVICE1 TVTC simulated data - fixing T and acting on Ng
The graph in Figure 19. and Figure 20. show VTH and TVTC trend fixing the temperature to
300K and changing Na in the range of 1e+16-6.1e+17cm
-3.



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